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See Technical Specifications

CY62157DV30LL-55ZSXI +BOM

High-performance memory module with 512Kx16 capacity

Manufacturer:

Cypress Semiconductor Corp
Mfr.Part #:

CY62157DV30LL-55ZSXI
Datasheet:

CY62157DV30LL-55ZSXI Datasheet (PDF)
Series:

MoBL®
Programmabe:

Not Verified
Memory Type:

Volatile
Memory Format:

SRAM

CY62157DV30LL-55ZSXI General Description

One of the key highlights of the CY62157DV30LL-55ZSXI is its low standby current consumption, which is advantageous for devices that rely on battery power. The chip's exceptional data retention voltage of 1.2V guarantees that stored data remains intact even in low-power scenarios. This feature is essential for ensuring data integrity in critical industrial settings

Key Features

4.5V − 5.5V operation
CMOS for optimum speed/power
Low active power (70 ns, LL version)
— 330 mW (max.) (60 mA)
Low standby power (70 ns, LL version)
— 110 µW (max.) (20 µA)
Automatic power-down when deselected
TTL-compatible inputs and outputs
Easy memory expansion with CE1, CE2, and OE options

Specifications

Series	MoBL®	Programmabe	Not Verified
Memory Type	Volatile	Memory Format	SRAM
Technology	SRAM - Asynchronous	Memory Size	8Mbit
Memory Organization	512K x 16	Memory Interface	Parallel
Write Cycle Time - Word, Page	55ns	Access Time	55 ns
Voltage - Supply	2.2V ~ 3.6V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount	Base Product Number	CY62157