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2 CHANNEL UHF BAND Si N-CHANNEL RF POWER MOSFET
DRManufacturer:
Mfr.Part #:
D1020UK
Datasheet:
Transistor Polarity:
N-Channel
Technology:
Si
Id - Continuous Drain Current:
25 A
Vds - Drain-Source Breakdown Voltage:
70 V
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The D1020UK is a high-power MOSFET designed for RF applications, with a maximum power dissipation of 389W and a drain-source voltage of 70V. This RF FET transistor is capable of handling continuous drain currents of up to 25A, making it suitable for high-power RF amplification tasks. Operating within a frequency range of 1MHz to 1GHz, this transistor is ideal for applications requiring high frequency operation. With a transistor case style of DR and 5 pins, the D1020UK offers versatility and ease of integration into various circuit designs
EXTRA LOW Crss
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN10 dB MINIMUM
HF/VHF/UHF COMMUNICATIONS from 1 MHz to 400 MHz
Product Category | RF MOSFET Transistors | Transistor Polarity | N-Channel |
Technology | Si | Id - Continuous Drain Current | 25 A |
Vds - Drain-Source Breakdown Voltage | 70 V | Operating Frequency | 400 MHz |
Gain | 10 dB | Output Power | 150 W |
Maximum Operating Temperature | + 150 C | Mounting Style | SMD/SMT |
Channel Mode | Enhancement | Configuration | Dual |
Height | 5.08 mm | Length | 34.03 mm |
Pd - Power Dissipation | 389 W | Product Type | RF MOSFET Transistors |
Subcategory | MOSFETs | Transistor Type | DMOS FET |
Type | RF Power MOSFET | Vgs - Gate-Source Voltage | 20 V |
Vgs th - Gate-Source Threshold Voltage | 1 V to 7 V | Width | 22.22 mm |
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