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See Technical Specifications

D44H8G +BOM

Bipolar (BJT) Transistor NPN 60 V 10 A 50MHz 2 W Through Hole TO-220

Manufacturer:

ONSEMI
Mfr.Part #:

D44H8G
Datasheet:

D44H8G Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

not_compliant
EDA/CAD Models:

Request Free CAD Models for D44H8G

D44H8G General Description

Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:60V; Dc Collector Current:10A; Power Dissipation Pd:2W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency Ft:50Mhz; Dc Current Gain Hfe:60Hfe; Msl:- Rohs Compliant: Yes |Onsemi D44H8G.

Key Features

Low Collector-Emitter Saturation Voltage
V_CE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
Pb-Free Packages are Available

Application

Industrial
Power Management
Signal Processing

Specifications

Source Content uid	D44H8G	Pbfree Code	Yes
Part Life Cycle Code	Active	Pin Count	3
Reach Compliance Code	not_compliant	ECCN Code	EAR99
HTS Code	8541.29.00.75	Factory Lead Time	4 Weeks
Additional Feature	LEADFORM OPTIONS ARE AVAILABLE	Case Connection	COLLECTOR
Collector Current-Max (IC)	10 A	Collector-Emitter Voltage-Max	60 V
Configuration	SINGLE	DC Current Gain-Min (hFE)	40
JEDEC-95 Code	TO-220AB	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	NPN
Power Dissipation-Max (Abs)	50 W	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Finish	Matte Tin (Sn) - annealed
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	40	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Transition Frequency-Nom (fT)	50 MHz