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DALC112S1RL +BOM

LOW CAPACITANCE DIODE ARRAY FOR ESD PROTECTION

DALC112S1RL General Description

Featuring a compact and efficient design, the DALC112S1RL offers reliable protection without compromising signal quality. Its innovative structure ensures that any sudden increases in voltage are swiftly neutralized, safeguarding connected devices from potential damage. The array's ability to handle high-speed signals with precision makes it a valuable component for systems where image quality and data integrity are paramount

Key Features

  • FULLY LAMINATED SHEET FOR RFI PROTECTION.
  • LOW CAPACITANCE AND HIGH ISOLATION RESISTIVITY.
  • EFFECTIVE ESD PROTECTION AGAINST VIBRATIONAL DAMAGE.

Specifications

Source Content uid DALC112S1RL Part Life Cycle Code Active
Pin Count 8 Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8541.10.00.50
Factory Lead Time 45 Weeks Additional Feature VERY LOW CAPACITANCE
Configuration COMPLEX Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE Forward Voltage-Max (VF) 1.3 V
JESD-30 Code R-PDSO-G8 JESD-609 Code e4
Moisture Sensitivity Level 1 Number of Elements 12
Number of Terminals 8 Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 18 V Reverse Current-Max 2 µA
Reverse Test Voltage 15 V Surface Mount YES
Technology AVALANCHE Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 Series DA1
Type Steering (Rail to Rail) Unidirectional Channels 6
Voltage - Reverse Standoff (Typ) 15V Power Line Protection No
Applications General Purpose Mounting Type Surface Mount
Base Product Number DALC112

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