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See Technical Specifications

DTC114ECAHZGT116 +BOM

100mA Current Rating

Manufacturer:

ROHM Semiconductor
Mfr.Part #:

DTC114ECAHZGT116
Datasheet:

DTC114ECAHZGT116 Datasheet (PDF)
Series:

Automotive, AEC-Q101
Transistor Type:

NPN - Pre-Biased
Current - Collector (Ic) (Max):

100 mA
Resistor - Base (R1):

10 kOhms
EDA/CAD Models:

Request Free CAD Models for DTC114ECAHZGT116

DTC114ECAHZGT116 General Description

Moreover, the DTC114ECAHZGT116 features a high current transfer ratio and fast switching speeds, making it suitable for high-frequency applications where quick and precise signal processing is crucial. This level of performance and reliability ensures that the digital transistor delivers consistent and dependable operation, even in demanding operating conditions

Key Features

The maximum collector current is 100 mA.
The maximum collector-emitter voltage is 50 V.
The maximum power dissipation is 200 mW.
The transistor is housed in a small surface-mount package called SOT-23.

Application

Switching circuits: The transistor can be used to turn on or off other components in an electronic circuit.
Amplifiers: The transistor can be used to amplify small signals to larger ones.
Voltage regulators: The transistor can be used as a part of a voltage regulator circuit to maintain a constant voltage output.

Specifications

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single, Pre-Biased Bipolar Transistors	Series	Automotive, AEC-Q101
Transistor Type	NPN - Pre-Biased	Current - Collector (Ic) (Max)	100 mA
Resistor - Base (R1)	10 kOhms	Resistor - Emitter Base (R2)	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)	-	Frequency - Transition	250 MHz
Power - Max	350 mW	Mounting Type	Surface Mount
Base Product Number	DTC114	Product Category	Bipolar Transistors - Pre-Biased
Configuration	Single	Transistor Polarity	NPN
Typical Input Resistor	10 kOhms	Typical Resistor Ratio	1
Mounting Style	SMD/SMT	DC Collector/Base Gain hfe Min	30
Continuous Collector Current	100 mA	Pd - Power Dissipation	200 mW
Maximum Operating Temperature	+ 150 C	Output Voltage	100 mV
Product Type	BJTs - Bipolar Transistors - Pre-Biased	Qualification	AEC-Q101
Factory Pack Quantity	3000	Subcategory	Transistors
Part # Aliases	DTC114ECAHZG