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DTC114ESATP +BOM
Small-signal NPN silicon transistor with 0.1A collector current and 50V breakdown voltage
SC-72-
Manufacturer:
ROHM CO LTD
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Mfr.Part #:
DTC114ESATP
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Datasheet:
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Part Life Cycle Code:
Obsolete
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Pin Count:
3
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ECCN Code:
EAR99
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Additional Feature:
BUILT IN BIAS RESISTOR RATIO IS 1
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EDA/CAD Models:
Availability: 7741 PCS
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DTC114ESATP General Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 50 mA 250 MHz 300 mW Through Hole SPT
Key Features
BUILT IN BIAS RESISTOR RATIO IS 1Application
SWITCHINGSpecifications
Part Life Cycle Code | Obsolete | Pin Count | 3 |
Reach Compliance Code | ECCN Code | EAR99 | |
Additional Feature | BUILT IN BIAS RESISTOR RATIO IS 1 | Collector Current-Max (IC) | 0.1 A |
Collector-Emitter Voltage-Max | 50 V | Configuration | SINGLE WITH BUILT-IN RESISTOR |
DC Current Gain-Min (hFE) | 30 | JESD-30 Code | R-PSIP-T3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Temperature-Max | 150 °C | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | NPN | Power Dissipation-Max (Abs) | 0.3 W |
Qualification Status | Not Qualified | Surface Mount | NO |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Transition Frequency-Nom (fT) | 250 MHz |
VCEsat-Max | 0.3 V | Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 50 mA | Voltage - Collector Emitter Breakdown (Max) | 50 V |
Resistor - Base (R1) | 10 kOhms | Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V | Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 500nA | Frequency - Transition | 250 MHz |
Power - Max | 300 mW | Mounting Type | Through Hole |
Base Product Number | DTC114 |
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In Stock: 7,741
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