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1-Phase Silicon Carbide Schottky Rectifier Diode, 1 Element, 56A, 1200V V(RRM), TO-263AB, 2 PIN Configuration
TO-263-3,D2PAK(2Leads+Tab),TO-263ABManufacturer:
Wolfspeed, Inc.
Mfr.Part #:
E4D20120G
Datasheet:
Series:
E-Series
Technology:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
56A
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With its Silicon Carbide construction, this diode is well-suited for high-temperature and high-frequency applications where traditional silicon diodes may fall short. Its TO-263AB package is designed for thermal efficiency and easy mounting on a circuit board
Series | E-Series | Technology | SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) | 1200 V | Current - Average Rectified (Io) | 56A |
Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 20 A | Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0 ns | Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
Capacitance @ Vr, F | 1474pF @ 0V, 1MHz | Grade | Automotive |
Mounting Type | Surface Mount | Operating Temperature - Junction | -55°C ~ 175°C |
Base Product Number | E4D20120 |
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