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EE-SX1131 +BOM
Compact phototransistor for precision sensing
Other-
Manufacturer:
Omron Electronics Inc-EMC Div
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Mfr.Part #:
EE-SX1131
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Datasheet:
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Sensing Distance:
0.079" (2mm)
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Sensing Method:
Through-Beam
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Output Configuration:
2 NPN
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Current - DC Forward (If) (Max):
25 mA
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Availability: 8825 PCS
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EE-SX1131 General Description
The EE-SX1131 is a cutting-edge non-modulated phototransistor module crafted by Omron Electronics. Its infrared emitting diode and phototransistor are enclosed in a compact package, ensuring seamless integration into a diverse range of applications. The module's primary function is to detect the presence or absence of an object by gauging the amount of infrared light reflected or interrupted by the object
Key Features
Features:Specifications
Sensing Distance | 0.079" (2mm) | Sensing Method | Through-Beam |
Output Configuration | 2 NPN | Current - DC Forward (If) (Max) | 25 mA |
Current - Collector (Ic) (Max) | 20 mA | Voltage - Collector Emitter Breakdown (Max) | 20 V |
Response Time | 10µs, 10µs | Operating Temperature | -30°C ~ 85°C |
Mounting Type | Surface Mount |
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In Stock: 8,825
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
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