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EM636165TS-6G +BOM

Synchronous DRAM, 1MX16, 5.4ns, CMOS, PDSO50, TSOP2-50

Key Features

Fast access time: 4.5/5/5/5.5/6.5/7.5 ns

Fast clock rate: 200/183/166/143/125/100 MHz

Self refresh mode: standard and low power

Internal pipelined architecture

512K word x 16-bit x 2-bank

Programmable Mode registers

- CAS# Latency: 1, 2, or 3

- Burst Length: 1, 2, 4, 8, or full page

- Burst Type: interleaved or linear burst

- Burst stop function

Individual byte controlled by LDQM and UDQM

Auto Refresh and Self Refresh

4096 refresh cycles/64ms

CKE power down mode

JEDEC standard +3.3V0.3V power supply

Interface: LVTTL

50-pin 400 mil plastic TSOP II package

60-ball, 6.4x10.1mm VFBGA package

Lead Free Package available for both TSOP II and VFBGA

Specifications

Product Category Memory ICs

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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In Stock: 4,074

Minimum Order: 1

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