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Trans MOSFET N-CH GaN 100V 23A 75-Pin Die
BGAManufacturer:
EPC
Mfr.Part #:
EPC2104
Datasheet:
ECCN:
EAR99
Supplier Cage Code:
6UTY1
Series:
eGaN®
Technology:
GaNFET (Gallium Nitride)
EDA/CAD Models:
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Mosfet Array 100V 23A Surface Mount Die
ECCN | EAR99 | Supplier Cage Code | 6UTY1 |
Series | eGaN® | Technology | GaNFET (Gallium Nitride) |
Configuration | 2 N-Channel (Half Bridge) | FET Feature | - |
Drain to Source Voltage (Vdss) | 100V | Current - Continuous Drain (Id) @ 25°C | 23A |
Rds On (Max) @ Id, Vgs | 6.3mOhm @ 20A, 5V | Vgs(th) (Max) @ Id | 2.5V @ 5.5mA |
Gate Charge (Qg) (Max) @ Vgs | 7nC @ 5V | Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 50V |
Power - Max | - | Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Base Product Number | EPC210 |
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