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ESM3030DV +BOM

Bipolar (BJT) Transistor NPN - Darlington 300 V 100 A 225 W Chassis Mount ISOTOP®

ESM3030DV General Description

Bipolar (BJT) Transistor NPN - Darlington 300 V 100 A 225 W Chassis Mount ISOTOP®

Specifications

Product Category Darlington Transistors Configuration Single Dual Emitter
Transistor Polarity NPN Collector- Emitter Voltage VCEO Max 300 V
Emitter- Base Voltage VEBO 7 V Maximum DC Collector Current 100 A
Maximum Collector Cut-off Current 1 mA Pd - Power Dissipation 225 W
Mounting Style Through Hole Maximum Operating Temperature + 150 C
Series ESM3030DV DC Collector/Base Gain hfe Min 300
DC Current Gain hFE Max 300 Height 9.1 mm
Length 38.2 mm Product Type Darlington Transistors
Factory Pack Quantity 100 Subcategory Transistors
Width 25.5 mm Unit Weight 1.304008 oz

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