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F3L11MR12W2M1B74BOMA1 +BOM

IGBT Module Trench Field Stop Three Level Inverter 1200 V 100 A Chassis Mount AG-EASY2B-2

F3L11MR12W2M1B74BOMA1 General Description

IGBT Module Trench Field Stop Three Level Inverter 1200 V 100 A Chassis Mount AG-EASY2B-2

Infineon Technologies Corporation Inventory

Key Features

  • CoolSiC trench MOSFET technology
  • 3-level ANPC topology
  • Full 1500 V
  • DC
  • Increased Si diode current rating
  • PressFIT technology
  • Broadest Easy portfolio
  • Superior gate-oxide reliability
  • Short and clean commutation loops
  • Supports the entire cos φ range - perfect fit for energy storage systems
  • Easy design-in
  • High degree of freedom for the inverter design
  • 150 kW power in solar applications when paralleling two modules
  • 75 kW power per module in energy storage systems
Infineon Technologies Corporation Original Stock

Application

  • Energy Storage Systems
  • Solutions for photovoltaic energy systems

Specifications

RHoS yes PBFree yes
HalogenFree no Product Category Discrete Semiconductor Modules
Product IGBT Silicon Carbide Modules Type CoolSiC MOSFET
Technology SiC Vf - Forward Voltage 4.6 V
Vr - Reverse Voltage 1.2 kV Vgs - Gate-Source Voltage - 10 V, 20 V
Mounting Style Press Fit Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C Configuration 3-Phase
Fall Time 18.5 ns Id - Continuous Drain Current 100 A
Operating Supply Voltage - Pd - Power Dissipation 20 mW (1/50 W)
Product Type Discrete Semiconductor Modules Rds On - Drain-Source Resistance 11.3 mOhms
Rise Time 23.4 ns Factory Pack Quantity 15
Subcategory Discrete Semiconductor Modules Transistor Polarity N-Channel
Typical Turn-Off Delay Time 82.9 ns Typical Turn-On Delay Time 26.7 ns
Vds - Drain-Source Breakdown Voltage 1.2 kV Vgs th - Gate-Source Threshold Voltage 5.55 V
Part # Aliases F3L11MR12W2M1_B74 SP005408206

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F3L11MR12W2M1B74BOMA1 Datasheet PDF

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