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See Technical Specifications

FDA24N50 +BOM

Power MOSFET, N-Channel, UniFETTM, 500 V, 24 A, 190 mΩ, TO-3P

Manufacturer:

onsemi
Mfr.Part #:

FDA24N50
Datasheet:

FDA24N50 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDA24N50

FDA24N50 General Description

The FDA24N50 UniFET TM MOSFET is a cutting-edge high voltage MOSFET that incorporates the latest planar stripe and DMOS technology. This innovative design helps to minimize on-state resistance, resulting in improved switching performance and enhanced avalanche energy strength. Whether you're working on power factor correction (PFC), flat panel display (FPD) TV power, ATX, or electronic lamp ballasts, this versatile device family is sure to meet your needs

Key Features

FDA approved
CE marked
RoHS compliant
Silicon material used
Dissipation capacity high
Long lifespan guaranteed

Application

Useful in multiple scenarios.
The go-to option for many tasks.

Specifications

Source Content uid	FDA24N50	Pbfree Code	Yes
Part Life Cycle Code	Obsolete	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	100 Weeks, 5 Days
Avalanche Energy Rating (Eas)	1872 mJ	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	500 V	Drain Current-Max (ID)	24 A
Drain-source On Resistance-Max	0.19 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PSFM-T3	JESD-609 Code	e3
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	270 W
Pulsed Drain Current-Max (IDM)	96 A	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Finish	MATTE TIN
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Transistor Application	SWITCHING	Transistor Element Material	SILICON