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FDA59N30 +BOM

Tube packaging of N-channel 300V 59A MOSFET with TO-3P pins

Manufacturer:

Onsemi
Mfr.Part #:

FDA59N30
Datasheet:

FDA59N30 Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
EDA/CAD Models:

Request Free CAD Models for FDA59N30

FDA59N30 General Description

The FDA59N30 MOSFET from the UniFET™ series is engineered to meet the rigorous demands of modern power conversion systems. Its innovative design focuses on achieving lower on-state resistance, resulting in improved efficiency and reliability in high voltage applications. With a strong emphasis on reducing losses and enhancing switching performance, this MOSFET is well-suited for applications requiring precise power control and stability

Key Features

Safe operating area (SOAR) tested
R_G = 120kΩ (Typ.)
I_R = 1.2mA (Max.)
High voltage rated (Up to 100V)
Low thermal impedance

Application

This product is perfect for all needs.

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	Through Hole
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	300 V	Id - Continuous Drain Current	59 A
Rds On - Drain-Source Resistance	56 mOhms	Vgs - Gate-Source Voltage	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage	3 V	Qg - Gate Charge	100 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	500 W	Channel Mode	Enhancement
Series	FDA59N30	Configuration	Single
Fall Time	200 ns	Height	20.1 mm
Length	16.2 mm	Product Type	MOSFET
Rise Time	575 ns	Factory Pack Quantity	30
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	120 ns	Typical Turn-On Delay Time	140 ns
Width	5 mm	Part # Aliases	FDA59N30_NL
Unit Weight	0.162260 oz