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See Technical Specifications

FDB2552 +BOM

N-Channel 150 V 5A (Ta), 37A (Tc) 150W (Tc) Surface Mount TO-263 (D2PAK)

Manufacturer:

onsemi
Mfr.Part #:

FDB2552
Datasheet:

FDB2552 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDB2552

FDB2552 General Description

Whether used in DC-DC converters, synchronous rectification circuits, or motor control systems, the FDB2552 N-Channel PowerTrench® MOSFET stands out as a high-performance solution for demanding power management requirements. Its exceptional combination of smaller QSYNC, fast switching, and low on-resistance makes it a valuable asset in modern electronic designs aiming for improved energy efficiency and performance

Key Features

Ultra-High-Frequency Operation
Low Distortion Signal Transmission
High Voltage Tolerance
Fast Overcurrent Protection

Application

Perfect for all occasions.
Highly versatile and reliable.
Great for everyday use.

Specifications

Source Content uid	FDB2552	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	4 Weeks
Avalanche Energy Rating (Eas)	390 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	150 V
Drain Current-Max (ID)	5 A	Drain-source On Resistance-Max	0.036 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-263AB
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	245	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	150 W	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON