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FDB2572 +BOM

N-Channel PowerTrench® MOSFET 150V, 29A, 54mΩ

Manufacturer:

onsemi
Mfr.Part #:

FDB2572
Datasheet:

FDB2572 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDB2572

FDB2572 General Description

Introducing the cutting-edge N-Channel PowerTrench® MOSFET FDB2572, boasting a voltage of 150V, current of 29A, and an impressive 54mΩ value. This shielded gate MOSFET features a reduced QSYNC and enhanced performance of the intrinsic body diode for soft reverse-recovery. Its rapid switching capabilities make it ideal for applications where efficiency in synchronous rectification is crucial. Upgrade your power management system with the latest in MOSFET technology

Key Features

This is the feature of product FDB72,'FDB72 is a high-power, low-voltage Schottky rectifier diode with current rating of 25A and reverse voltage rating of 70V.'
FDB72 has low forward voltage drop and fast recovery times.

Application

Flexible and efficient product.
Multi-functional and reliable.
Perfect for all kinds of projects.

Specifications

Source Content uid	FDB2572	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	41 Weeks
Avalanche Energy Rating (Eas)	36 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	150 V
Drain Current-Max (ID)	4 A	Drain-source On Resistance-Max	0.054 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-263AB
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Peak Reflow Temperature (Cel)	245
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	135 W
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	Matte Tin (Sn) - annealed	Terminal Form	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON