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See Technical Specifications

FDC3601N +BOM

Compact 6-pin SSOT package housing a high-performance N-channel MOSFET Transistor rated for 1A current and 100V voltage

Manufacturer:

Onsemi
Mfr.Part #:

FDC3601N
Datasheet:

FDC3601N Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

2 Channel
EDA/CAD Models:

Request Free CAD Models for FDC3601N

FDC3601N General Description

These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Key Features

Robust construction
High temperature tolerance
Silicon-based insulation
Self-isolation protection

Application

Diverse applications possible.
Adaptable for various needs.
Works well in many situations.

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	1 A	Rds On - Drain-Source Resistance	500 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	5 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	960 mW
Channel Mode	Enhancement	Tradename	PowerTrench
Series	FDC3601N	Configuration	Dual
Fall Time	4 ns	Forward Transconductance - Min	3.6 S
Height	1.1 mm	Length	2.9 mm
Product	MOSFET Small Signals	Product Type	MOSFET
Rise Time	4 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	2 N-Channel
Type	MOSFET	Typical Turn-Off Delay Time	11 ns
Typical Turn-On Delay Time	8 ns	Width	1.6 mm
Part # Aliases	FDC3601N_NL	Unit Weight	0.001270 oz