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FDC5614P +BOM

Low voltage drop and fast switching speeds make it ideal for power management

Manufacturer:

Onsemi
Mfr.Part #:

FDC5614P
Datasheet:

FDC5614P Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for FDC5614P

FDC5614P General Description

Featuring a supersot package, the FDC5614P is easy to integrate into compact designs without sacrificing performance. The Rds(on) test voltage of -10V provides accurate measurements of the on-resistance under real-world conditions, ensuring consistent results in practical applications. Whether used in power management systems or motor control circuits, this MOSFET delivers excellent performance and reliability

Key Features

High efficiency, low loss
Fast switching speed, high performance
Ultra-low RDS(ON), high current density
Compact design, high power density
Low capacitance, high reliability
Excellent thermal characteristics

Application

Reliable and efficient
Suitable for diverse tasks
Works effectively in any setting

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	3 A	Rds On - Drain-Source Resistance	105 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	24 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1.6 W
Channel Mode	Enhancement	Tradename	PowerTrench
Series	FDC5614P	Configuration	Single
Fall Time	10 ns	Forward Transconductance - Min	8 S
Height	1.1 mm	Length	2.9 mm
Product	MOSFET Small Signals	Product Type	MOSFET
Rise Time	10 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Type	MOSFET	Typical Turn-Off Delay Time	19 ns
Typical Turn-On Delay Time	7 ns	Width	1.6 mm
Part # Aliases	FDC5614P_NL	Unit Weight	0.001270 oz