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See Technical Specifications

FDC6000NZ +BOM

MOSFET Dual N-Channel 2.5V Spec PowerTrench

Manufacturer:

onsemi
Mfr.Part #:

FDC6000NZ
Datasheet:

FDC6000NZ Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

2 Channel
EDA/CAD Models:

Request Free CAD Models for FDC6000NZ

FDC6000NZ General Description

Product FDC6000NZ is a MOSFET transistor that is designed for dual N polarity. The transistor has a typical voltage of 20V with a continuous current rating of 7.3A. It has a low resistance on-state of 0.02ohm and requires a gate-source voltage of 4.5V for Rds on measurement. The threshold voltage Vgs is typically 0.9V, with a maximum of 1.5V

Key Features

6.5 A, 20 V RDS(ON) = 20 mΩ @ VGS = 4.5 V RDS(ON) = 28 mΩ @ VGS = 2.5 V
ESD protection diode (note 3)
High performance trench technology for extremely low RDS(ON)
FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size

Application

Battery management/Charger Application
Load switch

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	7.3 A	Rds On - Drain-Source Resistance	20 mOhms
Vgs - Gate-Source Voltage	- 12 V, + 12 V	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1.6 W
Channel Mode	Enhancement	Configuration	Dual
Fall Time	15 ns	Forward Transconductance - Min	30 S
Height	1.1 mm	Length	2.9 mm
Product	MOSFET Small Signal	Product Type	MOSFET
Rise Time	15 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	2 N-Channel
Type	MOSFET	Typical Turn-Off Delay Time	18 ns
Typical Turn-On Delay Time	10 ns	Width	1.6 mm
Part # Aliases	FDC6000NZ_NL	Unit Weight	0.001270 oz