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FDC602P +BOM

High-performance Transistor MOSFET with P-Channel design 20V 5.5A

Manufacturer:

Onsemi
Mfr.Part #:

FDC602P
Datasheet:

FDC602P Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for FDC602P

FDC602P General Description

FDC602P is a P-Channel 2.5V specified MOSFET that features a rugged gate version of Fairchild’s advanced PowerTrench process. Tailored for power management applications, this MOSFET offers a wide range of gate drive voltage from 2.5V to 12V, making it a versatile and reliable choice for a variety of power management needs

Key Features

High-speed switching
RDS(on) minimized
Advanced trench structure
Fast response time
Limited inrush current
Safe operating area defined

Application

Great for everyday use
Perfect for all tasks
Suitable for various projects

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	5.5 A	Rds On - Drain-Source Resistance	35 mOhms
Vgs - Gate-Source Voltage	- 12 V, + 12 V	Vgs th - Gate-Source Threshold Voltage	1.5 V
Qg - Gate Charge	20 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1.6 W
Channel Mode	Enhancement	Tradename	PowerTrench
Series	FDC602P	Configuration	Single
Fall Time	11 ns	Forward Transconductance - Min	19 S
Height	1.1 mm	Length	2.9 mm
Product	MOSFET Small Signals	Product Type	MOSFET
Rise Time	11 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Type	MOSFET	Typical Turn-Off Delay Time	57 ns
Typical Turn-On Delay Time	15 ns	Width	1.6 mm
Part # Aliases	FDC602P_NL	Unit Weight	0.001270 oz