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TSOT-23-6 MOSFETs ROHS
SSOT-6Manufacturer:
Mfr.Part #:
FDC6303N
Datasheet:
Technology:
Si
Mounting Style:
SMD/SMT
Transistor Polarity:
N-Channel
Number Of Channels:
2 Channel
EDA/CAD Models:
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The FDC6303N is a dual N-Channel logic level enhancement mode field effect transistor that stands out for its innovative technology. Utilizing a high cell density DMOS technology, this transistor boasts a minimized on-state resistance, making it ideal for low voltage applications. Its unique design allows it to serve as a replacement for digital transistors in load switching applications, eliminating the need for bias resistors. This means that with just one N-Channel FET, you can replace multiple digital transistors with different bias resistors, such as those found in the IMHxA series
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 25 V |
Id - Continuous Drain Current | 680 mA | Rds On - Drain-Source Resistance | 450 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 650 mV |
Qg - Gate Charge | 2.3 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 900 mW |
Channel Mode | Enhancement | Series | FDC6303N |
Configuration | Dual | Fall Time | 8.5 ns |
Forward Transconductance - Min | 0.145 S | Height | 1.1 mm |
Length | 2.9 mm | Product | MOSFET Small Signals |
Product Type | MOSFET | Rise Time | 8.5 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 2 N-Channel | Type | FET |
Typical Turn-Off Delay Time | 17 ns | Typical Turn-On Delay Time | 3 ns |
Width | 1.6 mm | Part # Aliases | FDC6303N_NL |
Unit Weight | 0.001270 oz |
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