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Dual P-Channel Digital FET -25V, -0.46A, 1.1Ω
TSOT-23-6Manufacturer:
onsemi
Mfr.Part #:
FDC6304P
Datasheet:
Technology:
Si
Mounting Style:
SMD/SMT
Transistor Polarity:
P-Channel
Number Of Channels:
2 Channel
EDA/CAD Models:
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These P-Channel enhancement mode field effect transistor are produced using a proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | P-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 25 V |
Id - Continuous Drain Current | 460 mA | Rds On - Drain-Source Resistance | 1.5 Ohms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 1.5 V |
Qg - Gate Charge | 1.5 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 900 mW |
Channel Mode | Enhancement | Series | FDC6304P |
Configuration | Dual | Fall Time | 8 ns |
Forward Transconductance - Min | 0.8 S | Height | 1.1 mm |
Length | 2.9 mm | Product | MOSFET Small Signals |
Product Type | MOSFET | Rise Time | 8 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 2 P-Channel | Typical Turn-Off Delay Time | 55 ns |
Typical Turn-On Delay Time | 7 ns | Width | 1.6 mm |
Unit Weight | 0.001270 oz |
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