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See Technical Specifications

FDC6306P +BOM

Dual P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -1.9A, 170mΩ

Manufacturer:

onsemi
Mfr.Part #:

FDC6306P
Datasheet:

FDC6306P Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDC6306P

FDC6306P General Description

Elevate your electronic designs with the FDC6306P, a superior P-Channel MOSFET that offers unmatched efficiency and reliability. Engineered using the latest PowerTrench technology, this device excels in minimizing on-state resistance and gate charge, ensuring seamless switching operation. Its compact size is perfect for applications where space is a premium, providing exceptional power dissipation in a small form factor. Trust the FDC6306P to deliver outstanding performance in a variety of electronic applications

Key Features

Compact SuperSOT™-6 package, space-saving design
High-performance operation, low R_DS(ON)
Robust against electromagnetic interference (EMI)

Application

Great for various uses.
Perfect for all purposes.
Suitable for many tasks.

Specifications

Source Content uid	FDC6306P	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	20 V	Drain Current-Max (ID)	1.9 A
Drain-source On Resistance-Max	0.17 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PDSO-G6	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	2
Number of Terminals	6	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	P-CHANNEL
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON