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FDC6321C +BOM
Dual N & P Channel Digital FET 25V
SOT23-6-
Manufacturer:
-
Mfr.Part #:
FDC6321C
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Datasheet:
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Technology:
Si
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Mounting Style:
SMD/SMT
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Transistor Polarity:
N-Channel, P-Channel
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Number Of Channels:
2 Channel
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EDA/CAD Models:
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for FDC6321C, guaranteed quotes back within 12hr.
Availability: 6472 PCS
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FDC6321C General Description
Elevate your electronic projects with the innovative FDC6321C dual N & P Channel logic level enhancement mode field effect transistor. Engineered using a cutting-edge high cell density DMOS technology, this transistor boasts minimal on-state resistance for unrivaled performance in low voltage applications. Specifically designed to replace digital transistors in load switching applications, the FDC6321C eliminates the need for bias resistors, simplifying circuit design and enhancing overall efficiency. By consolidating multiple digital transistors with different bias resistors into a single dual digital FET, this transistor offers a versatile and cost-effective solution for a wide range of electronic applications. Trust the FDC6321C to deliver reliable, high-performance results for your next project
Key Features
- High voltage, low current.
- Fast switching, low noise.
- High-speed, high-power.
- Low-voltage, high-current.
- Ultra-fast, ultra-low power.
- High-reliability, long lifetime.
Application
- Great for all your needs.
- Perfect for any situation.
- Works well in various settings.
Specifications
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel, P-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 25 V |
Id - Continuous Drain Current | 680 mA, 460 mA | Rds On - Drain-Source Resistance | 450 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 650 mV, 1.5 V |
Qg - Gate Charge | 2.3 nC, 1.5 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 900 mW |
Channel Mode | Enhancement | Series | FDC6321C |
Configuration | Dual | Fall Time | 8 ns, 9 ns |
Forward Transconductance - Min | 1.45 S, 0.8 S | Height | 1.1 mm |
Length | 2.9 mm | Product | MOSFET Small Signals |
Product Type | MOSFET | Rise Time | 8 ns, 9 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel, 1 P-Channel | Type | FET |
Typical Turn-Off Delay Time | 17 ns, 55 ns | Typical Turn-On Delay Time | 3 ns, 7 ns |
Width | 1.6 mm | Part # Aliases | FDC6321C_NL |
Unit Weight | 0.001270 oz |
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In Stock: 6,472
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $0.375 | $0.38 |
10+ | $0.307 | $3.07 |
30+ | $0.276 | $8.28 |
100+ | $0.239 | $23.90 |
500+ | $0.224 | $112.00 |
1000+ | $0.215 | $215.00 |
The prices below are for reference only.