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FDC640P +BOM

P-Channel PowerTrench® MOSFET, 2.5V specified, -20V, -4.5A, 53mΩ

FDC640P General Description

When it comes to power management, the FDC640P P-Channel MOSFET stands out as a top choice for engineers and designers. With its rugged gate version of the advanced PowerTrench® process, this MOSFET ensures robustness and high performance in demanding applications. Its specified voltage range of 2.5V to 12V provides the flexibility needed for diverse gate drive voltages, making it suitable for a wide range of power management scenarios

Key Features

  • High-speed switching, -4.5 A, -20 V.
  • Fast recovery time, low RDS(ON).
  • Compact design, high reliability, and rugged gate rating (±12V).
  • Ultra-low RDS(ON), high-performance trench technology.
  • High power density, fast switching speed, and low loss.
  • Excellent thermal stability, high reliability, and ±12V gate rating.

Application

  • High quality and reliable
  • Perfect for any task
  • Trustworthy and durable

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 4.5 A Rds On - Drain-Source Resistance 53 mOhms
Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 1.5 V
Qg - Gate Charge 13 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.6 W
Channel Mode Enhancement Tradename PowerTrench
Series FDC640P Configuration Single
Fall Time 9 ns Forward Transconductance - Min 16 S
Height 1.1 mm Length 2.9 mm
Product MOSFET Small Signal Product Type MOSFET
Rise Time 9 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Type MOSFET Typical Turn-Off Delay Time 24 ns
Typical Turn-On Delay Time 12 ns Width 1.6 mm
Part # Aliases FDC640P_NL Unit Weight 0.001270 oz

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