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FDC855N +BOM

N-Channel, PowerTrench® MOSFET, Logic Level, 30V, 6.1A, 27mΩ

Manufacturer:

onsemi
Mfr.Part #:

FDC855N
Datasheet:

FDC855N Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for FDC855N

FDC855N General Description

Designed for low voltage and battery powered applications, the FDC855N N-Channel Logic Level MOSFET stands out as an efficient and reliable solution. Utilizing an advanced PowerTrench® process, this MOSFET is engineered to minimize on-state resistance, effectively optimizing power consumption. Whether it's for portable devices or other battery-powered electronics, the FDC855N is an ideal choice for applications where minimizing in-line power loss is a priority

Key Features

Compact design, high power
Efficient performance, reliable operation
Low noise, high precision control
Slim profile, minimal space required
Fast switching, low current loss
High frequency, wide range performance

Application

This item is perfect for various uses.
Choose this for all your needs.
Great for a wide range of applications.

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	6.1 A	Rds On - Drain-Source Resistance	27 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	13 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1.6 W
Channel Mode	Enhancement	Tradename	PowerTrench
Series	FDC855N	Configuration	Single
Fall Time	2 ns	Height	1.1 mm
Length	2.9 mm	Product	MOSFET Small Signal
Product Type	MOSFET	Rise Time	2 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	14 ns
Typical Turn-On Delay Time	6 ns	Width	1.6 mm
Unit Weight	0.001270 oz