This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

FDD5612 +BOM

60V N-Channel PowerTrench MOSFET

Manufacturer:

Fairchild Semiconductor
Mfr.Part #:

FDD5612
Datasheet:

FDD5612 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

3
Avalanche Energy Rating (Eas):

90 mJ
EDA/CAD Models:

Request Free CAD Models for FDD5612

FDD5612 General Description

The FDD5612 is a powerful N Channel MOSFET transistor designed for applications requiring high continuous drain current. With a drain source voltage of 60V and an on resistance of 55mohm, this transistor is capable of handling up to 18A of current. The TO-252 case style and SMD termination type make it easy to integrate into electronic circuits. With a power dissipation of 3.8W, this transistor operates efficiently even in extreme temperature ranges from -55°C to +175°C. The threshold voltage of 2.4V and maximum gate-source voltage of 10V ensure reliable performance in a variety of applications

Key Features

High voltage, low current.
Fast switching, low noise.
Optimized for high speed apps.
Ultra-low gate charge Q_g.
Compact package, high density.
Very fast rise and fall times.

Application

This product is incredibly versatile.
Suitable for a wide range of applications.
Can be used in numerous situations.

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Active
Pin Count	3	Reach Compliance Code
Avalanche Energy Rating (Eas)	90 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	60 V
Drain Current-Max (ID)	18 A	Drain-source On Resistance-Max	0.055 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-252
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	100 A	Qualification Status	COMMERCIAL
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON