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See Technical Specifications

FDD6685 +BOM

30V 20mΩ@10V,11A 52W 3V@250uA P Channel TO-252(DPAK) MOSFETs ROHS

Manufacturer:

Onsemi
Mfr.Part #:

FDD6685
Datasheet:

FDD6685 Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel

FDD6685 General Description

The FDD6685 sets the standard for P-Channel MOSFETs with its rugged gate construction and advanced PowerTrench® process technology. Perfect for power management applications that require a wide range of gate drive voltage ratings, this MOSFET offers superior performance and durability. From industrial power systems to consumer electronics, the FDD6685 is the ideal choice for any project that demands reliable power management

Key Features

-40A, -30V
R_DS(ON) = 20 mΩ @ V_GS = -10V
R_DS(ON) = 30 mΩ @ V_GS = -4.5V
Fast switching speed
High performance trench technology for extremelylow R_DS(ON)
High power and current handling capability
Qualified to AEC Q101

Application

This product is general usage and suitable for many different applications.

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	P-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	30 V	Id - Continuous Drain Current	40 A
Rds On - Drain-Source Resistance	20 mOhms	Vgs - Gate-Source Voltage	- 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage	3 V	Qg - Gate Charge	24 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	52 W	Channel Mode	Enhancement
Tradename	PowerTrench	Series	FDD6685
Configuration	Single	Fall Time	21 ns
Forward Transconductance - Min	26 S	Height	2.39 mm
Length	6.73 mm	Product Type	MOSFET
Rise Time	11 ns	Factory Pack Quantity	2500
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Type	MOSFET	Typical Turn-Off Delay Time	43 ns
Typical Turn-On Delay Time	17 ns	Width	6.22 mm
Part # Aliases	FDD6685_NL	Unit Weight	0.011640 oz