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FDD6690A +BOM

N-Channel MOSFET FDD6690A from ON Semiconductor, featuring PowerTrench technology, capable of handling 46A at 30V, housed in a 3-Pin DPAK package

Manufacturer:

Onsemi
Mfr.Part #:

FDD6690A
Datasheet:

FDD6690A Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel

FDD6690A General Description

Fairchild Semiconductor's FDD6690A N-Channel Logic level MOSFET is a testament to the company's commitment to innovation and excellence in semiconductor technology. The PowerTrench process used in its manufacturing has been meticulously engineered to minimize on-state resistance and gate charge, resulting in superior switching performance and enhanced energy efficiency. This makes the FDD6690A an ideal choice for applications requiring precision control and reliable power management

Key Features

Fast switching speed
Low gate charge, high reliability
High voltage capability, low losses
Pulse width modulation enabled
Trench technology for reduced R_DS(on)
Silicon carbide substrate for increased durability

Application

Useful for any occasion.
Versatile and reliable choice.

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	30 V	Id - Continuous Drain Current	46 A
Rds On - Drain-Source Resistance	12 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1 V	Qg - Gate Charge	18 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	3.3 W	Channel Mode	Enhancement
Tradename	PowerTrench	Series	FDD6690A
Configuration	Single	Fall Time	12 ns
Forward Transconductance - Min	47 S	Height	2.39 mm
Length	6.73 mm	Product Type	MOSFET
Rise Time	7 ns	Factory Pack Quantity	2500
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Type	MOSFET	Typical Turn-Off Delay Time	29 ns
Typical Turn-On Delay Time	10 ns	Width	6.22 mm
Part # Aliases	FDD6690A_NL	Unit Weight	0.011640 oz