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See Technical Specifications

FDD8424H +BOM

This MOSFET features dual channels, comprising both N and P-Channel types, facilitating versatile circuit designs and configurations

Manufacturer:

Onsemi
Mfr.Part #:

FDD8424H
Datasheet:

FDD8424H Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel, P-Channel
EDA/CAD Models:

Request Free CAD Models for FDD8424H

FDD8424H General Description

Featuring a gate-source threshold voltage of 1V to 2.5V, the FDD8424H provides flexibility in gate drive voltage levels, allowing for adaptable use in various circuit designs. Additionally, the MOSFET boasts a low gate charge of 32nC and a total power dissipation of 2.5W, further enhancing its suitability for a wide range of operating conditions

Key Features

Rugged over-current protection
High-temperature resistant
Safe under-voltage lockout
Limited inrush current

Application

Power supply units
Energy conversion
Motor control
Communication devices
Solar power inverters
Battery backup systems

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel, P-Channel	Number of Channels	2 Channel
Vds - Drain-Source Breakdown Voltage	40 V	Id - Continuous Drain Current	9 A
Rds On - Drain-Source Resistance	24 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1 V, 3 V	Qg - Gate Charge	20 nC, 24 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	3.1 W	Channel Mode	Enhancement
Tradename	PowerTrench	Series	FDD8424H
Configuration	Dual	Fall Time	6 ns, 3 ns
Forward Transconductance - Min	29 S	Height	2.39 mm
Length	6.73 mm	Product Type	MOSFET
Rise Time	13 ns, 3 ns	Factory Pack Quantity	2500
Subcategory	MOSFETs	Transistor Type	1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time	17 ns, 20 ns	Typical Turn-On Delay Time	7 ns
Width	6.22 mm	Unit Weight	0.139332 oz