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FDD86252 +BOM
N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 27 A, 52 mΩ
TO-252-2-
Manufacturer:
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Mfr.Part #:
FDD86252
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Datasheet:
-
Pbfree Code:
Yes
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Part Life Cycle Code:
Active
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Reach Compliance Code:
not_compliant
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ECCN Code:
EAR99
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EDA/CAD Models:
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Availability: 5468 PCS
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FDD86252 General Description
Experience the epitome of efficiency with the FDD86252 N-Channel MOSFET, engineered using an advanced Power Trench® process that prioritizes minimal on-state resistance and unmatched switching prowess. Take your applications to the next level with this high-performance component
Key Features
- Advanced Power Management
- Max Efficiency: 95%
- High Frequency Operation
Application
- Sleek desktop computer power supply
- Compact device charger
Specifications
Source Content uid | FDD86252 | Pbfree Code | Yes |
Part Life Cycle Code | Active | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Factory Lead Time | 40 Weeks |
Avalanche Energy Rating (Eas) | 72 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 150 V |
Drain Current-Max (ID) | 5 A | Drain-source On Resistance-Max | 0.052 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-252 |
JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 2 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 89 W |
Pulsed Drain Current-Max (IDM) | 25 A | Surface Mount | YES |
Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
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In Stock: 5,468
Minimum Order: 1
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1+ | - | - |
The prices below are for reference only.