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FDD86540 +BOM

N-Channel PowerTrench® MOSFET 60V, 136 A, 4.1 mΩ

Manufacturer:

onsemi
Mfr.Part #:

FDD86540
Datasheet:

FDD86540 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDD86540

FDD86540 General Description

The FDD86540 N-Channel MOSFET is a specialized component designed to enhance the efficiency and reduce switch node ringing in DC/DC converters. Whether used with synchronous or conventional switching PWM controllers, this MOSFET is optimized for low gate charge, low r_DS(on), fast switching speed, and superior body diode reverse recovery performance

Key Features

Compact design for space savings
Operating temperature range: -40°C to 150°C
Meets UL and IEC safety standards
Silicon carbide diode for high-reliability
Low inductance package for minimal noise
Epoxy-free and halogen-free compliant

Application

High Power Battery Charger

Specifications

Source Content uid	FDD86540	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	35 Weeks
Avalanche Energy Rating (Eas)	228 mJ	Case Connection	DRAIN
Configuration	SINGLE	DS Breakdown Voltage-Min	60 V
Drain Current-Max (ID)	21.5 A	Drain-source On Resistance-Max	0.0041 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-252
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	127 W
Pulsed Drain Current-Max (IDM)	120 A	Surface Mount	YES
Terminal Finish	Matte Tin (Sn) - annealed	Terminal Form	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON