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See Technical Specifications

FDG311N +BOM

N-Channel PowerTrench® MOSFET, 2.5V Specified, 1.9 A, 115 mΩ

Manufacturer:

Fairchild Semiconductor
Mfr.Part #:

FDG311N
Datasheet:

FDG311N Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

6
Configuration:

SINGLE WITH BUILT-IN DIODE
EDA/CAD Models:

Request Free CAD Models for FDG311N

FDG311N General Description

The FDG311N N-Channel MOSFET is a cutting-edge component crafted with precision using the latest PowerTrench technology. With a focus on reducing on-state resistance while keeping gate charge low, this MOSFET promises outstanding switching capabilities that are ideal for use in portable electronics

Key Features

Very low gate charge (1nC typical)
Extremely high R_DS(ON)
R_DS(ON) = 0.025 Ω @ V_GS = 2.5 V
Suitable for high-frequency applications
High-speed operation up to 200 kHz
Industry standard SC70-6 surface mount package

Application

A must-have for multiple tasks.
Works well in diverse settings.
Applicable in various scenarios.

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Active
Pin Count	6	Reach Compliance Code
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	20 V
Drain Current-Max (ID)	1.9 A	Drain-source On Resistance-Max	0.105 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-G6
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	6
Operating Mode	ENHANCEMENT MODE	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Qualification Status	COMMERCIAL
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON