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FDG6332C-F085 +BOM

20V N & P Channel PowerTrench® MOSFETs

Manufacturer:

onsemi
Mfr.Part #:

FDG6332C-F085
Datasheet:

FDG6332C-F085 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

End Of Life
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDG6332C-F085

FDG6332C-F085 General Description

The N & P-Channel MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical.

Key Features

Q1 0.7A, 20V
R_DS(ON) = 300mΩ @ V_GS = 4.5V
R_DS(ON) = 400mΩ @ V_GS = 2.5V
Q2 -0.6A, -20V
R_DS(ON) = 420mΩ @ V_GS = -4.5V
R_DS(ON) = 630mΩ @ V_GS = -2.5V
Low gate charge
High performance trench technology for extremely low R_DS(ON)
SC70-60 package: small footprint (51% smaller than SSOT-6); low profile (1mm thick)
Qualified to AEC Q101
RoHS Compliant

Application

Infotainment
Portable Navigation
Infotainment
Other
Power Train
Safety and Control
Comfort and Convenience
Body Electronics
Vehicle Security Systems
Other Automotive

Specifications

Source Content uid	FDG6332C-F085	Pbfree Code	Yes
Part Life Cycle Code	End Of Life	Reach Compliance Code	compliant
ECCN Code	EAR99	Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	20 V	Drain Current-Max (ID)	0.7 A
Drain-source On Resistance-Max	0.3 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PDSO-G6	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	2
Number of Terminals	6	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL	Power Dissipation-Max (Abs)	0.3 W
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON