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FDH15N50 +BOM

MOSFET 15A 500V N-Channel UltraFET

FDH15N50 General Description

N-Channel 500 V 15A (Tc) 300W (Tc) Through Hole TO-247-3

Key Features

  • Low Gate Charge Qg results in Simple Drive Requirement
  • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness
  • Reduced r DS(ON)
  • Reduced Miller Capacitance and Low Input Capacitance
  • Improved Switching Speed with Low EMI
  • 175°C Rated Junction Temperature

Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 500 V
Id - Continuous Drain Current 15 A Rds On - Drain-Source Resistance 380 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 300 W
Channel Mode Enhancement Configuration Single
Fall Time 5 ns Forward Transconductance - Min 10 S
Height 20.82 mm Length 15.87 mm
Product Type MOSFET Rise Time 5.4 ns
Factory Pack Quantity 150 Subcategory MOSFETs
Transistor Type 1 N-Channel Type MOSFET
Typical Turn-Off Delay Time 26 ns Typical Turn-On Delay Time 9 ns
Width 4.82 mm Unit Weight 0.211644 oz

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