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FDMB668P +BOM

MOSFET suitable for 1.8V logic levels

FDMB668P General Description

One of the standout features of the FDMB668P is its threshold voltage of -2V, making it a breeze to control with standard logic level signals. This attribute simplifies the integration of the MOSFET into various electronic circuits for power management purposes, opening up a world of possibilities for its application in numerous projects

Specifications

Series PowerTrench® FET Type P-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 6.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 35mOhm @ 6.1A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 59 nC @ 10 V Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 2085 pF @ 10 V Power Dissipation (Max) 1.9W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount

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Qty. Unit Price Ext. Price
1+ $0.277 $0.28
200+ $0.107 $21.40
500+ $0.103 $51.50
1000+ $0.101 $101.00

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