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See Technical Specifications

FDMC007N08LC +BOM

N-Channel Shielded Gate PowerTrench® MOSFET 80V, 66A, 7.0mΩ

Manufacturer:

onsemi
Mfr.Part #:

FDMC007N08LC
Datasheet:

FDMC007N08LC Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for FDMC007N08LC

FDMC007N08LC General Description

The FDMC007N08LC N-Channel MV MOSFET is a cutting-edge product that is manufactured using the advanced PowerTrench® process. This process is designed to incorporate Shielded Gate technology, which results in minimal on-state resistance and a top-of-the-line soft body diode. These features make the FDMC007N08LC an ideal choice for applications that demand optimal performance and efficiency

Key Features

Fast switching times
Low current draw
High voltage tolerance
100% tested for thermal stress
Epoxy-free and halogen-free construction

Application

Great value for the price.
Trustworthy brand for quality.
An indispensable tool for professionals.

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	80 V
Id - Continuous Drain Current	66 A	Rds On - Drain-Source Resistance	5.7 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	41 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	57 W
Channel Mode	Enhancement	Series	FDMC007N08LC
Configuration	Single	Fall Time	2.1 ns
Forward Transconductance - Min	80 S	Product Type	MOSFET
Rise Time	2.4 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	24 ns	Typical Turn-On Delay Time	10 ns
Unit Weight	0.005386 oz