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See Technical Specifications

FDMC007N08LCDC +BOM

N-Channel Shielded Gate PowerTrench® MOSFET 80 V, 64A, 6.8mΩ

Manufacturer:

onsemi
Mfr.Part #:

FDMC007N08LCDC
Datasheet:

FDMC007N08LCDC Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for FDMC007N08LCDC

FDMC007N08LCDC General Description

The FDMC007N08LCDC is a high-performing N-channel MV MOSFET that utilizes the PowerTrench® process, featuring Shielded Gate technology for improved efficiency. With a focus on minimizing on-state resistance and maintaining a top-notch soft body diode, this advanced technology sets a new standard for power management in electronic devices

Key Features

Rugged mechanical design
Excellent thermal performance
Secure authentication protocol
Simplified user interface

Application

Surge Protection
Renewable Energy
UPS System

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	80 V
Id - Continuous Drain Current	64 A	Rds On - Drain-Source Resistance	6.8 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	44 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	57 W
Channel Mode	Enhancement	Configuration	Single
Fall Time	4 ns	Forward Transconductance - Min	80 S
Product Type	MOSFET	Rise Time	3 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Typical Turn-Off Delay Time	36 ns	Typical Turn-On Delay Time	11 ns
Unit Weight	0.004308 oz