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See Technical Specifications

FDMC2674 +BOM

N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mΩ

Manufacturer:

onsemi
Mfr.Part #:

FDMC2674
Datasheet:

FDMC2674 Datasheet (PDF)
Series:

UniFET™
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

220 V
EDA/CAD Models:

Request Free CAD Models for FDMC2674

FDMC2674 General Description

Meet the FDMC2674 UltraFET® device – the epitome of excellence in power conversion technology. With its specially optimized characteristics including low rDS(on), ESR, total and Miller gate charge, this device is tailor-made for high frequency DC to DC converters. It sets a new standard for efficiency and performance, ensuring smooth and reliable power conversion in any application

Key Features

Low V_F
High Speed Switching
Reduced Switch Node Ripples
Lower ESR and ESL at 1MHz
Higher Junction Temperature T_Jmax
Improved dv/dt Capability

Application

Great for all occasions
Used by professionals worldwide
A must-have for every household

Specifications

Series	UniFET™	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	220 V
Current - Continuous Drain (Id) @ 25°C	1A (Ta), 7A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	366mOhm @ 1A, 10V	Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1180 pF @ 100 V	Power Dissipation (Max)	2.1W (Ta), 42W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	FDMC26