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100V 12A 110mΩ@10V,3.3A 35W 4V@250uA N Channel Power-33 MOSFETs ROHS
Power-33-8Manufacturer:
Mfr.Part #:
FDMC3612
Datasheet:
Technology:
Si
Mounting Style:
SMD/SMT
Transistor Polarity:
N-Channel
Number Of Channels:
1 Channel
EDA/CAD Models:
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The FDMC3612 N-Channel MOSFET is tailored for those seeking a reliable and efficient solution for their electronics projects. By incorporating the Power Trench® process, this MOSFET offers unparalleled performance with reduced on-state resistance and enhanced switching capabilities. Whether you're a hobbyist or a professional, this MOSFET is sure to exceed your expectations
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
Id - Continuous Drain Current | 16 A | Rds On - Drain-Source Resistance | 122 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 4 V |
Qg - Gate Charge | 14.4 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 35 W |
Channel Mode | Enhancement | Series | FDMC3612 |
Configuration | Single | Fall Time | 2 ns |
Forward Transconductance - Min | 13 S | Height | 0.8 mm |
Length | 3.3 mm | Product Type | MOSFET |
Rise Time | 2.8 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | N-Channel Power Trench MOSFET | Typical Turn-Off Delay Time | 19 ns |
Typical Turn-On Delay Time | 7.4 ns | Width | 3.3 mm |
Unit Weight | 0.006349 oz |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $0.843 | $0.84 |
10+ | $0.730 | $7.30 |
30+ | $0.673 | $20.19 |
100+ | $0.617 | $61.70 |
500+ | $0.561 | $280.50 |
1000+ | $0.543 | $543.00 |
The prices below are for reference only.