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FDMC6679AZ +BOM

P-Channel 30 V 11.5A (Ta), 20A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount 8-MLP (3.3x3.3)

FDMC6679AZ General Description

MOSFET, P CH, 30V, 20A, MLP 3.3X3.3; Transistor Polarity:P Channel; Continuous Drain Current Id:-20A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0086ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.8V; Power Dissipation Pd:41W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

Key Features

  • High current handling for demanding applications
  • Low on-resistance and fast switching speed
  • Robust design for high temperature and reliability
  • Lead-free and RoHS compliant for environmental safety

Application

  • Perfect for all occasions.

Specifications

Source Content uid FDMC6679AZ Pbfree Code Yes
Part Life Cycle Code Not Recommended Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 66 Weeks
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V Drain Current-Max (ID) 11.5 A
Drain-source On Resistance-Max 0.01 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N5 JESD-609 Code e4
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 5 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL Power Dissipation-Max (Abs) 41 W
Pulsed Drain Current-Max (IDM) 32 A Qualification Status Not Qualified
Surface Mount YES Terminal Finish NICKEL PALLADIUM GOLD
Terminal Form NO LEAD Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON

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