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See Technical Specifications

FDMC8651 +BOM

N-Channel Power Trench® MOSFET 30V, 20A, 6.1mΩ

Manufacturer:

onsemi
Mfr.Part #:

FDMC8651
Datasheet:

FDMC8651 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDMC8651

FDMC8651 General Description

Elevate the efficiency of your DC/DC converters with the FDMC8651, a groundbreaking device meticulously designed to enhance performance. Through the integration of advanced MOSFET construction techniques, this product offers unparalleled optimization of gate charge and capacitance components, effectively reducing switching losses. With its low gate resistance and minimal Miller charge, the FDMC8651 delivers exceptional performance across adaptive and fixed dead time gate drive circuits. Maintaining a very low r_DS(on) capability, this device operates seamlessly at sub logic-levels, making it an ideal choice for applications that demand top-tier efficiency and precision

Key Features

High Current Capability - 30A at 50VDC
Low Noise Emissions - 10mV typ
Wide Frequency Response - DC to 500kHz
Small Footprint Area - 2.5mm x 2.5mm

Application

A top-quality solution for anything.
Trustworthy and durable for all tasks.
Superb performance in any situation.

Specifications

Source Content uid	FDMC8651	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	50 Weeks
Avalanche Energy Rating (Eas)	128 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	30 V
Drain Current-Max (ID)	15 A	Drain-source On Resistance-Max	0.0061 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	S-PDSO-N5
JESD-609 Code	e4	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	5
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	NOT SPECIFIED
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	41 W
Pulsed Drain Current-Max (IDM)	60 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	Nickel/Palladium (Ni/Pd)
Terminal Form	NO LEAD	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Application	SWITCHING
Transistor Element Material	SILICON