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See Technical Specifications

FDMS3672 +BOM

This MOSFET, designated FDMS3672, is an N-channel semiconductor device engineered to operate at voltages up to 100V and currents up to 7

Manufacturer:

Onsemi
Mfr.Part #:

FDMS3672
Datasheet:

FDMS3672 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for FDMS3672

FDMS3672 General Description

The FDMS3672 is a game-changer in power conversion, offering unmatched efficiency and performance. As an UltraFET device, it is engineered with optimized characteristics including low RDS(on), low ESR, and low total and Miller gate charge. These features make the FDMS3672 the perfect choice for high frequency DC-to-DC converters, delivering seamless and efficient power conversion for a wide range of applications

Key Features

Ultra-low noise operation
High-speed switching capability
Low thermal resistance

Application

Essential for everyday tasks.
Convenient and easy to use.
Dependable in any situation.

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	7.4 A	Rds On - Drain-Source Resistance	19 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	44 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	2.5 W
Channel Mode	Enhancement	Tradename	UltraFET
Series	FDMS3672	Configuration	Single
Fall Time	8 ns	Forward Transconductance - Min	20 S
Height	0.8 mm	Length	6 mm
Product Type	MOSFET	Rise Time	11 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	MOSFET
Typical Turn-Off Delay Time	36 ns	Typical Turn-On Delay Time	23 ns
Width	5 mm	Unit Weight	0.007408 oz