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See Technical Specifications

FDMS6673BZ +BOM

P-Channel PowerTrench® MOSFET -30V, -82A, 6.8mΩ

Manufacturer:

onsemi
Mfr.Part #:

FDMS6673BZ
Datasheet:

FDMS6673BZ Datasheet (PDF)
Series:

PowerTrench®
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

30 V
EDA/CAD Models:

Request Free CAD Models for FDMS6673BZ

FDMS6673BZ General Description

The FDMS6673BZ is engineered with the goal of reducing power losses in load switch applications. By leveraging cutting-edge silicon and package technologies, this product is able to deliver the lowest RDS(on) and superior ESD protection. This ensures that the load switch operates with maximum efficiency, ultimately leading to improved overall system performance and energy savings

Key Features

Fault-tolerant design for increased availability
Compact MSL1 package size for space-sensitive applications
Compliant with RoHS environmental regulations

Application

An essential tool to have
Useful for multiple purposes
Highly recommended product

Specifications

Series	PowerTrench®	FET Type	P-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	15.2A (Ta), 28A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6.8mOhm @ 15.2A, 10V	Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	130 nC @ 10 V	Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	5915 pF @ 15 V	Power Dissipation (Max)	2.5W (Ta), 73W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	FDMS6673