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See Technical Specifications

FDMS86500DC +BOM

60V, 108A Transistor

Manufacturer:

Onsemi
Mfr.Part #:

FDMS86500DC
Datasheet:

FDMS86500DC Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel

FDMS86500DC General Description

The FDMS86500DC N-Channel MOSFET represents a significant technological breakthrough in the realm of power semiconductor devices. Through the integration of advanced Power Trench® and Dual Cool™ package technologies, this MOSFET achieves unmatched levels of on-resistance reduction and switching performance enhancement. Its exceptional thermal management capabilities, coupled with a remarkably low Junction-to-Ambient thermal resistance, make it a standout component for demanding power applications where efficiency and reliability are paramount

Key Features

Advanced Power Device Technology
Silicon Carbide MOSFET Solution
New Generation Power Management
High Speed Switching Performance
Innovative Design for Reliability
Ultra Low On-State Resistance

Application

Power Supply Unit
Synchronous Converter
Telecom Rectifier
Server Vcore

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V	Id - Continuous Drain Current	29 A
Rds On - Drain-Source Resistance	2.3 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2.5 V	Qg - Gate Charge	76 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	125 W	Channel Mode	Enhancement
Series	FDMS86500DC	Configuration	Single
Height	1.05 mm	Length	6 mm
Product Type	MOSFET	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	2 N-Channel
Width	5 mm	Unit Weight	0.003175 oz