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See Technical Specifications

FDN352AP +BOM

Single P-Channel PowerTrench® MOSFET -30V, -1.3A, 180mΩ

Manufacturer:

ON
Mfr.Part #:

FDN352AP
Datasheet:

FDN352AP Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for FDN352AP

FDN352AP General Description

The FDN352AP is a P-Channel Logic Level MOSFET manufactured by Fairchild Semiconductor using their advanced Power Trench process. This specific design minimizes on-state resistance while keeping gate charge low for optimal switching performance. Ideal for low voltage and battery powered applications, this MOSFET offers minimal power loss in a compact surface mount package

Key Features

-2A, -15V
R_DS(ON) = 200 mΩ @ V_GS = -3V
Excellent voltage regulation capability.
-1.8A, -15V
R_DS(ON) = 180 mΩ @ V_GS = -2.5V
Highly reliable operation with very low failure rate.

Application

Advanced data encryption
Customizable user interface
Seamless integration with devices

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	1.3 A	Rds On - Drain-Source Resistance	180 mOhms
Vgs - Gate-Source Voltage	- 25 V, + 25 V	Vgs th - Gate-Source Threshold Voltage	2.5 V
Qg - Gate Charge	1.9 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	500 mW
Channel Mode	Enhancement	Series	FDN352AP
Configuration	Single	Fall Time	15 ns
Forward Transconductance - Min	2 S	Height	1.12 mm
Length	2.9 mm	Product	MOSFET Small Signals
Product Type	MOSFET	Rise Time	15 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 P-Channel	Type	MOSFET
Typical Turn-Off Delay Time	10 ns	Typical Turn-On Delay Time	4 ns
Width	1.4 mm	Part # Aliases	FDN352AP_NL
Unit Weight	0.001058 oz