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FDN358P +BOM

SOT-23 MOSFETs ROHS

FDN358P General Description

Elevate your electronic designs with the FDN358P P-Channel Logic Level MOSFET, a state-of-the-art component that delivers unrivaled performance and efficiency. Utilizing a specialized Power Trench process, this MOSFET minimizes on-state resistance and gate charge, guaranteeing superior switching performance in various portable electronics applications. Whether you're creating load switching circuits, power management systems, battery charging circuits, or DC/DC converters, the FDN358P's advanced design ensures optimal functionality and reliability for all your projects

Key Features

  • -30A, -18V
  • RDS(ON) = 70mΩ @ VGS = 9.5V
  • Low Gate Current (0.2mA typical)
  • High Ripple Current Handling (200A peak)
  • Fast Turn-On Time (3μs max)

Application

  • Efficient Power Control
  • High Performance Switch
  • Optimized Charging Solution

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 1.5 A Rds On - Drain-Source Resistance 125 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 5.6 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 500 mW
Channel Mode Enhancement Tradename PowerTrench
Series FDN358P Configuration Single
Fall Time 13 ns Forward Transconductance - Min 3.5 S
Height 1.12 mm Length 2.9 mm
Product MOSFET Small Signals Product Type MOSFET
Rise Time 13 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Type MOSFET Typical Turn-Off Delay Time 12 ns
Typical Turn-On Delay Time 5 ns Width 1.4 mm
Part # Aliases FDN358P_NL Unit Weight 0.001058 oz

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