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23 N-Channel MOSFET 30V 2.7A
SOT-23-3Manufacturer:
Mfr.Part #:
FDN359AN
Datasheet:
Pbfree Code:
Yes
Part Life Cycle Code:
Active
Reach Compliance Code:
compliant
ECCN Code:
EAR99
EDA/CAD Models:
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The FDN359AN N-Channel Logic Level MOSFET from Fairchild Semiconductor is specifically designed for low voltage and battery powered applications. Using the advanced PowerTrench process, this MOSFET delivers minimal on-state resistance and superior switching performance, making it an ideal choice for applications where low power loss and fast switching are crucial. From handheld devices to automotive systems, the FDN359AN offers reliable and efficient performance in a variety of low voltage settings
Source Content uid | FDN359AN | Pbfree Code | Yes |
Part Life Cycle Code | Active | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Factory Lead Time | 4 Weeks |
Additional Feature | LOGIC LEVEL COMPATIBLE | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 30 V | Drain Current-Max (ID) | 2.7 A |
Drain-source On Resistance-Max | 0.046 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PDSO-G3 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Operating Temperature-Min | -55 °C |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 0.5 W | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | Matte Tin (Sn) - annealed |
Terminal Form | GULL WING | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
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