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FDN5630 +BOM

60V 1.7A 100mΩ@1.7A,10V 500mW 3V@250uA null SOT-23-3 MOSFETs ROHS

FDN5630 General Description

Designed for maximum efficiency, the FDN5630 N-Channel MOSFET is a game-changer in the realm of DC/DC converters. Featuring a small SOT23 footprint and ultra-low RDS(ON), this MOSFET is tailored to excel in both synchronous and conventional switching PWM controllers. ON Semiconductor's PowerTrench technology sets the FDN5630 apart, offering faster switching speeds and improved efficiency compared to its counterparts. With the FDN5630 onboard, designers can unlock higher performance levels and streamline board layout without compromising on energy savings in power management applications

Key Features

  • 1.7 A, 60 V
  • RDS(ON) = 0.100 Ω @ VGS = 10 V
  • RDS(ON) = 0.120 Ω @ VGS = 6 V
  • Optimized for use in high frequency DC/DC converters.
  • Low gate charge.
  • Very fast switching.
  • SuperSOT™ - 3 Provides Low rDS(ON) in SOT23 Footprint

Application

  • This product is general usage and suitable for many different applications.
  • DC/DC Converter
  • Motor Drives

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 1.7 A Rds On - Drain-Source Resistance 73 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 10 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 500 mW
Channel Mode Enhancement Tradename PowerTrench
Series FDN5630 Configuration Single
Fall Time 6 ns Forward Transconductance - Min 6 S
Height 1.12 mm Length 2.9 mm
Product MOSFET Small Signals Product Type MOSFET
Rise Time 6 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Type MOSFET Typical Turn-Off Delay Time 15 ns
Typical Turn-On Delay Time 10 ns Width 1.4 mm
Part # Aliases FDN5630_NL Unit Weight 0.001058 oz

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