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FDPF3N50NZ +BOM

Power MOSFET, N-Channel, UniFETTM II, 500 V, 3 A, 2.5 Ω, TO-220F

Manufacturer:

onsemi
Mfr.Part #:

FDPF3N50NZ
Datasheet:

FDPF3N50NZ Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

500 V
Current - Continuous Drain (Id) @ 25°C:

3A (Tc)
EDA/CAD Models:

Request Free CAD Models for FDPF3N50NZ

FDPF3N50NZ General Description

When it comes to high voltage MOSFETs, the FDPF3N50NZ stands out as a top performer in terms of on-state resistance, switching performance, and avalanche energy strength. Its unique combination of advanced technology and robust design make it a versatile solution for a wide range of power converter applications, ensuring efficient and reliable operation in diverse settings

Key Features

Low on-state voltage drop
High current handling capability
Reduced switching loss
Enhanced reliability feature
Wide operating temperature range
Improved EMI characteristics

Application

Great for various tasks
Compatible with many items
Handles diverse applications

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V	Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	2.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	9 nC @ 10 V
Vgs (Max)	±25V	Input Capacitance (Ciss) (Max) @ Vds	280 pF @ 25 V
FET Feature	-	Power Dissipation (Max)	27W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole